Semiconductor device and its manufacture method

Semiconductor device and its manufacture method

  • CN 101,170,127 B
  • Filed: 10/23/2007
  • Issued: 03/06/2013
  • Est. Priority Date: 10/23/2006
  • Status: Active Grant
First Claim
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1. semiconductor device comprises:

  • The main electrode of one complete silication;

    AndOne dielectric medium is connected in described main electrode, and described main electrode comprises;

    One material, it has a work function and a work function is adjusted element, described work function adjust element in order to the work function of the described material of adjusting described main electrode to reach a predetermined value, wherein said material comprises the alloy of silicon and nickel, it is ytterbium that wherein said work function is adjusted element, and wherein said main electrode also comprises;

    One prevents from spreading dopant elements, and it is adjusted element towards described dielectric medium diffusion and/or diffuse into described dielectric medium in order to prevent described work function, and wherein said to prevent from spreading dopant elements be phosphorus (P).

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