Junction-isolated vias

Junction-isolated vias

  • CN 101,171,674 B
  • Filed: 02/27/2006
  • Issued: 12/26/2012
  • Est. Priority Date: 03/02/2005
  • Status: Active Grant
First Claim
Patent Images

1. one kind forms the method for tying isolation, conductive interconnection in silicon substrate, comprising:

  • Silicon substrate with first and second flat surfaces is provided;

    Grown oxide layer on each surface;

    Form opening through two lip-deep oxide skin(coating)s, be used for being used as the zone of power connection end, and the said zone of mixing;

    This first surface etch-hole through this substrate is to the degree of depth less than this substrate thickness, to form the passage of cecum;

    Said passage diffusion is had the alloy that is different from this baseplate material, thereby the body junction of this passage and this silicon substrate is isolated;

    In with respect to this oxide on this second surface of this passage, open a zone, and use with this passage in the identical dopant that spread should the zone to this channel bottom;

    AndDeposition is used for the metal of this power connection end on two surfaces of this substrate, and in each surface the light-composited film power connection end.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×