Storage cell and its manufacturing process

Storage cell and its manufacturing process

  • CN 101,174,672 A
  • Filed: 09/30/2007
  • Published: 05/07/2008
  • Est. Priority Date: 10/04/2006
  • Status: Active Application
First Claim
Patent Images

1. the processing procedure of a memory cell is characterized in that comprising:

  • On a conductor layer that is positioned at substrate top, form one first electrode layer;

    On this first electrode layer, form a transition metal layer;

    This transition metal layer is carried out a plasma oxidation step, to form a transition metal oxide layer as the predecessor of a data storage layer;

    AndOn this transition metal oxide layer, form a second electrode lay.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×