Method for manufacturing semiconductor substrate

Method for manufacturing semiconductor substrate

  • CN 101,179,014 A
  • Filed: 11/12/2007
  • Published: 05/14/2008
  • Est. Priority Date: 11/10/2006
  • Status: Active Application
First Claim
Patent Images

1. the manufacture method of a Semiconductor substrate possesses:

  • The 1st step, this step is with 1.5 * 10 17Atoms/cm 2Above doping is injected hydrogen ion the interarea side of silicon substrate;

    The 2nd step, this step are the interareas of support substrate of the interarea of above-mentioned silicon substrate and low melting point of fitting;

    The 3rd step, this step are with the substrate after the above-mentioned applying, more than 120 ℃ and

    not surpass the temperature below 250 ℃

    of the fusing point of above-mentioned support substrate, heat-treat;

    AndThe 4th step, this step are with the applying substrate after the above-mentioned heat treatment, along the hydrogen ion injection interface of above-mentioned silicon substrate, peel off the silicon crystalline film, and on the surface of above-mentioned support substrate, form silicon thin film.

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