Semiconductor device and its making method

Semiconductor device and its making method

  • CN 101,189,721 B
  • Filed: 06/02/2005
  • Issued: 04/01/2015
  • Est. Priority Date: 06/02/2005
  • Status: Active Grant
First Claim
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1. a semiconductor device, is characterized in that, has ferroelectric condenser, interlayer dielectric, wiring, the first barrier film, the second barrier film, the 3rd barrier film,Above-mentioned ferroelectric condenser is formed at the top of Semiconductor substrate, and has lower electrode, ferroelectric film and upper electrode,Above-mentioned first barrier film, directly covers the part of upper surface to the upper surface of above-mentioned lower electrode from above-mentioned upper electrode,Above-mentioned second barrier film covers above-mentioned ferroelectric condenser,Above-mentioned interlayer dielectric covers above-mentioned second barrier film,Above-mentioned 3rd barrier film covers above-mentioned interlayer dielectric,Above-mentioned wiring is formed in the top of the 3rd barrier film, and is connected with above-mentioned ferroelectric condenser,Above-mentioned second barrier film is duplexer, and its lower floor is a kind of film selected from the group be made up of pellumina, aluminium nitride film and aluminum oxynitride film, and its upper strata is a kind of film selected from oxidation titanium film, tantalum-oxide film, zirconium oxide film,Above-mentioned second barrier film, covers the side of above-mentioned first barrier film and above-mentioned lower electrode,Above-mentioned first barrier film, connects with the upper surface of the upper surface of above-mentioned upper electrode, the side of above-mentioned ferroelectric film and above-mentioned lower electrode,Above-mentioned second barrier film, connects with the upper surface of above-mentioned first barrier film and the side of above-mentioned lower electrode,This ferroelectric condenser is the ferroelectric condenser of plane,Described 3rd barrier film is a kind of film selected from the group be made up of pellumina, oxidation titanium film, aluminium nitride film, aluminum oxynitride film, tantalum-oxide film and zirconium oxide film.

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