Pixel structure manufacturing method

Pixel structure manufacturing method

  • CN 101,197,332 A
  • Filed: 12/26/2007
  • Published: 06/11/2008
  • Est. Priority Date: 12/26/2007
  • Status: Active Application
First Claim
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1. production method of pixel structure comprises:

  • Substrate is provided;

    Form first conductive layer on this substrate;

    Provide first shade in this first conductive layer top, and this first shade expose this first conductive layer of part;

    Use laser to shine this first conductive layer, removing this first shade institute this first conductive layer of exposed portions, and form grid through this first shade;

    Form gate insulator on this substrate, to cover this grid;

    Form channel layer, source electrode simultaneously and drain on this gate insulator of this grid top, wherein this source electrode and this drain configuration be in the subregion of this channel layer, and this grid, this channel layer, this source electrode and should drain electrode formation thin-film transistor;

    Form the patterning protective layer on this thin-film transistor, this patterning protective layer exposes this drain electrode of part;

    AndForm pixel electrode, be electrically connected at this drain electrode.

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