High power semiconductor laser diode

High power semiconductor laser diode

  • CN 101,213,712 A
  • Filed: 06/28/2006
  • Published: 07/02/2008
  • Est. Priority Date: 06/28/2005
  • Status: Active Grant
First Claim
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1. high power semiconductor laser diode comprises:

  • Semiconductor body,Active region with two ends,Seal the front and back of these two ends,Cover first injection device of at least a portion of described semiconductor body, be used for injecting electronics to described active region, preferably in the n-of described laser contact side,With second injection device that the described first injection device subtend is provided with, cover at least a portion of described semiconductor body, be used for to described active region injected hole, preferably, it is characterized in that in the p-of described laser contact side,At least one of described injection device comprises metal layer and is connected to the electric connection of described metal layer that described electric connection is formed or constructs, and injects so that described injection device produces the electric current that reduces at least one place of described two ends.

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