High power semiconductor laser diode

High power semiconductor laser diode

  • CN 101,213,712 B
  • Filed: 06/28/2006
  • Issued: 03/27/2013
  • Est. Priority Date: 06/28/2005
  • Status: Active Grant
First Claim
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1. high power semiconductor laser diode comprises:

  • Semiconductor body, it has the active region (10) of containing two ends (5) and the front and back of defining these two ends (5),Cover first injector (3) of at least a portion of described semiconductor body, be used for injecting electronics to described active region (10), andWith described the first injector (3) subtend setting and cover second injector (13) of at least a portion of described semiconductor body, be used for to described active region injected hole,It is characterized in that,At least one of described the first and second injectors comprises metal layer (3,13) and be connected to described metal layer (3,13) electric connection, described electric connection takes to touch the form of band or a plurality of contact (4), and described electric connection is effective length of penetration α

    that electric current scatters in described active region (10) at least one distance of described end EffAt least half, and described metal layer (3,13) is enough thin, thus so that described injector produces the electric current that reduces at least one place of described end injects, wherein effectively length of penetration defines with following equation;

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