Thin film transistor, thin film transistor substrate, and method of manufacturing the same

Thin film transistor, thin film transistor substrate, and method of manufacturing the same

  • CN 101,226,901 B
  • Filed: 12/14/2007
  • Issued: 02/18/2015
  • Est. Priority Date: 12/14/2006
  • Status: Active Grant
First Claim
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1. manufacture a method for thin film transistor base plate, comprising:

  • The the first conductive pattern group comprising gate line, gate electrode and gate pad plate electrode is formed at substrate surface;

    The surface being formed with this substrate of this first conductive pattern group thereon forms gate insulator;

    This gate insulator is formed the oxide semiconductor figure with this gate electrode;

    On the surface being formed with this substrate of this oxide semiconductor figure thereon, order forms the first conductive layer and the second conductive layer, and this first conductive layer is formed by transparent conductive material and this second conductive layer is formed by metal material;

    The pixel electrode that this first conductive layer graphical and the second conductive layer are integrally formed with this first conductive layer forming the second conductive pattern group and formation and this drain electrode comprising data wire, source electrode, drain electrode and data pad;

    WithThis source electrode and this drain electrode form the column spacer be made up of organic insulator, for when filter substrate and described thin film transistor base plate are bonded together, provides enough liquid crystal drop edges.

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