Thin-film transistor, active element array substrate as well as liquid crystal display panel

Thin-film transistor, active element array substrate as well as liquid crystal display panel

  • CN 101,226,964 A
  • Filed: 02/14/2008
  • Published: 07/23/2008
  • Est. Priority Date: 02/14/2008
  • Status: Active Application
First Claim
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1. thin-film transistor comprises:

  • One substrate;

    One grid is disposed on this substrate;

    One gate insulator is disposed on this substrate, to cover this grid;

    One channel layer is disposed on the gate insulator of this grid top;

    AndAn one source pole and a drain electrode are disposed at respectively on this channel layer of part of these grid both sides;

    Wherein, in this grid, this source electrode and this drain electrode at least one has an end conductive layer, the conduction interlayer of a top conductive layer and between this end conductive layer and this top conductive layer, this end conductive layer is different with the material of this conduction interlayer, and thickness that should end conductive layer is less than or equal to 150 dusts in fact.

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