Temperature measurement and control of wafer support in thermal processing chamber

Temperature measurement and control of wafer support in thermal processing chamber

  • CN 101,231,941 A
  • Filed: 01/15/2008
  • Published: 07/30/2008
  • Est. Priority Date: 01/15/2007
  • Status: Active Application
First Claim
Patent Images

1. chamber that is used to handle substrate comprises:

  • One chamber enclosure is used for limiting the processing space;

    Be arranged on the substrate support in the described processing space;

    Be arranged on the edge ring on the described substrate support, described edge ring configuration is used for the described substrate of peripheral upper support at described substrate;

    First thermal source is used to heat described substrate;

    WithSecond thermal source is used to heat described edge ring, and it is controlled that wherein said second thermal source is independent of described first thermal source.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×