Silicon wafer and manufacturing method thereof

Silicon wafer and manufacturing method thereof

  • CN 101,240,447 B
  • Filed: 11/30/2007
  • Issued: 09/25/2013
  • Est. Priority Date: 12/01/2006
  • Status: Active Grant
First Claim
Patent Images

1. silicon wafer, wherein BMD is shaped as octahedron, it is characterized in that,Be present in the degree of depth apart from this silicon wafer surface and be among 50 μ

  • m or the bigger locational BMD, the density of the BMD of catercorner length in 10nm to 50nm scope is 5 * 10 11/ cm 3Or higher, Be present in the degree of depth apart from this silicon wafer surface and be among 50 μ

    m or the bigger locational BMD, catercorner length is that the density of 300nm or bigger BMD is 1 * 10 7/ cm 3Or lower, and Interstitial oxygen concentration is 5 * 10 17Individual atom/cm 3Or lower, Wherein the BMD of octahedra shape be by a plurality of the BMD that 111} face and other face center on, the catercorner length of BMD be in [100] direction and [010] direction than the elder.

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