Memory cell device and programming methods

Memory cell device and programming methods

  • CN 101,241,757 A
  • Filed: 02/05/2008
  • Published: 08/13/2008
  • Est. Priority Date: 02/05/2007
  • Status: Active Application
First Claim
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1. , a kind of programming one comprises the method for the storage unit of phase-transition material, it is characterized in that this method comprises:

  • Set a data value of this storage unit;

    Apply a set of pulses to store this data value, this group pulse comprises an initial normalization pulse, this initial normalization pulse has a pulse shape and is used for this phase-transition material of this storage unit is adjusted to a normalized resistance state in advance, and a succeeding impulse, this succeeding impulse has this phase-transition material that a pulse shape is used for this storage unit and is set to a resistance value corresponding to this setting data value from this normalized resistance state.

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