Doping of particulate semiconductor materials

Doping of particulate semiconductor materials

  • CN 101,248,222 B
  • Filed: 08/23/2006
  • Issued: 05/13/2015
  • Est. Priority Date: 08/23/2005
  • Status: Active Grant
First Claim
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1. the method for a doped semiconductor materials, described method comprises and being mixed with ion salt or preparation of ionic salts by a certain amount of particulate semiconductor materials, be adsorbed on described particle to cause ion or be adsorbed onto in described particle, change the free carrier concn of described particle thus, the granularity of wherein said particulate semiconductor materials is within the scope of 1nm to 100 μ

  • m, and wherein said ion salt or preparation of ionic salts comprise NaCl or MgCl 2.

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