Improved performance solid state detectors

Improved performance solid state detectors

  • CN 101,263,403 B
  • Filed: 08/18/2006
  • Issued: 05/08/2013
  • Est. Priority Date: 09/15/2005
  • Status: Active Grant
First Claim
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1. imaging detector comprises:

  • Transition material is used for directly or indirectly converting radiation to electronics;

    Be located immediately at least one lip-deep electrode of described transition material, wherein, any two electrodes are separated by the groove that forms in described transition material, and separate a distance;

    At least be arranged on the passivation layer that is formed by dielectric material within the described groove between described two electrodes,Wherein, at least a portion physical contact of each electrode and adhere to the described passivation layer that is formed by dielectric material

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