High-frequency inversion arc-welding power supply main power system

High-frequency inversion arc-welding power supply main power system

  • CN 101,264,546 A
  • Filed: 05/09/2008
  • Published: 09/17/2008
  • Est. Priority Date: 05/09/2008
  • Status: Active Application
First Claim
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1. high-frequency inversion arc-welding power supply main power system is characterized in that:

  • include eight switching tube IGBT, eight switching tube IGBT have grid, emission collection and colelctor electrode respectively;

    Wherein;

    the positive termination first switching tube IGBT (Q of the 540V voltage after the rectification 1) colelctor electrode, negative terminal meets the 4th switching tube IGBT (Q 4) emitter stage;

    First resistance (the R 1) and the second resistance (R 2) series connection is between the 540V direct current after the rectification;

    First electric capacity (the C 1) and the second electric capacity (C 2) series connection is between the 540V direct current after the rectification;

    First resistance (the R 1) and the second resistance (R 2) the series connection point and the first electric capacity (C 1) and the second electric capacity (C 2) series connection point link to each other, and with second switch pipe IGBT (Q 2) emitter stage link to each other;

    The first switching tube IGBT (Q 1) emitter stage and second switch pipe IGBT (Q 2) colelctor electrode, the 5th switching tube IGBT (Q 5) colelctor electrode and the 7th switching tube IGBT (Q 7) colelctor electrode link to each other;

    Second switch pipe IGBT (Q 2) emitter stage and the 3rd switching tube IGBT (Q 3) colelctor electrode link to each other;

    The 3rd switching tube IGBT (Q 3) emitter stage and the 4th switching tube IGBT (Q 4) colelctor electrode, the 6th switching tube IGBT (Q 6) emitter stage, the 8th switching tube IGBT (Q 8) emitter stage link to each other;

    The 5th switching tube IGBT (Q 5) emitter stage and the 6th switching tube IGBT (Q 6) colelctor electrode link to each other the 7th switching tube IGBT (Q 7) emitter stage and the 8th switching tube IGBT (Q 8) colelctor electrode link to each other;

    The 3rd electric capacity (C 3) be connected second switch pipe IGBT (Q 2) colelctor electrode and the 3rd switching tube IGBT (Q 3) emitter stage between;

    Each switching tube IGBT is parallel with a diode, and the anode of diode links to each other with the emitter stage of switching tube IGBT, and diode cathode links to each other with the colelctor electrode of switching tube IGBT;

    Grid, emitter stage on eight switching tube IGBT are received respectively on the IGBT drive circuit;

    The two ends of driving transformer L primary coil meet the 5th switching tube IGBT (Q respectively 5) emitter stage and the 7th switching tube IGBT (Q 7) emitter stage.

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