High efficiency rectifier

High efficiency rectifier

CN
  • CN 101,271,926 A
  • Filed: 03/10/2008
  • Published: 09/24/2008
  • Est. Priority Date: 03/09/2007
  • Status: Active Application
First Claim
Patent Images

1. semiconductor rectifier device comprises:

  • One deck makes its oversaturated supersaturation silicon with the dopant of first conduction type;

    The background zone of first conduction type is roughly under the supersaturation silicon layer and be adjacent;

    The drift region of second conduction type is roughly under the background zone and be adjacent;

    AndThe substrate of second conduction type is roughly under drift region.

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