Hydrogen treatment to improve photoresist adhesion and rework consistency

Hydrogen treatment to improve photoresist adhesion and rework consistency

  • CN 101,273,443 A
  • Filed: 09/26/2006
  • Published: 09/24/2008
  • Est. Priority Date: 09/26/2005
  • Status: Active Application
First Claim
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1. one kind is used for from the plasma ashing method of Semiconductor substrate selective removal photoresist, organic overlying strata and/or polymers/residues, and described method comprises:

  • Substrate is placed plasma reactor, described substrate comprises photoresist layer and/or the organic layer that is deposited on dielectric layer or the oxide skin(coating), and wherein said dielectric layer or oxide skin(coating) were used handling based on the plasma of hydrogen before the described photoresist layer of deposition and/or organic overlying strata;

    Hydrogen source gas is provided to described plasma reactor, and in the presence of energy source, makes described hydrogen source gas reaction to generate plasma based on hydrogen;

    AndDescribed substrate is exposed to described plasma based on hydrogen under the plasma ashing condition, described plasma ashing condition is enough to optionally remove described photoresist, organic overlying strata and/or polymers/residues, thereby stays below dielectric layer or the oxide skin(coating) that is in reducing condition.

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