Vertical profile fixing

Vertical profile fixing

  • CN 101,278,381 A
  • Filed: 09/29/2006
  • Published: 10/01/2008
  • Est. Priority Date: 10/05/2005
  • Status: Active Application
First Claim
Patent Images

1. method that is used at the etch layer etch features comprises:

  • Formation has photoresist patterns of features photoresist mask on described etch layer, and described photoresist feature has sidewall, and the described sidewall of wherein said photoresist feature has along the irregular pattern of the degree of depth of described photoresist feature;

    Correction is along the described irregular pattern of the degree of depth of the described photoresist feature of the described sidewall of described photoresist feature, and described correction comprises at least one circulation, and wherein each circulation comprises;

    Sidewall deposition;

    AndThe pattern shaping stage;

    Pass described photoresist feature and etch features into described etch layer;

    AndRemove described mask.

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