Reproducible resistance variable insulating memory devices and methods for forming same

Reproducible resistance variable insulating memory devices and methods for forming same

  • CN 101,288,187 B
  • Filed: 08/11/2006
  • Issued: 01/08/2014
  • Est. Priority Date: 08/15/2005
  • Status: Active Grant
First Claim
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1. a memory component, it comprises:

  • Substrate;

    Dielectric layer, it is positioned at described substrate top;

    The first electrode, it is formed on described substrate and fully in the opening of described dielectric layer, the lower end of described the first electrode is greater than the upper end of described the first electrode;

    The second electrode;

    AndThe resistance variable insulating layer, it is between described first and second electrode and in described opening, and wherein said resistance variable insulating layer surrounds described the first electrode fully, except the lower surface of described the first electrode.

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