Semiconductor chip and manufacturing method thereof

Semiconductor chip and manufacturing method thereof

  • CN 101,304,014 B
  • Filed: 05/07/2008
  • Issued: 03/27/2013
  • Est. Priority Date: 05/07/2007
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor chip with the salient point that forms corresponding to pad electrode, whereinThis pad electrode is coated with titanium layer, copper layer and nickel dam successively;

  • The intermetallics layer that this salient point has the indium layer and arranges between this indium layer and this nickel dam;

    AndThis intermetallics layer be thickness be 1 μ

    m or on the indium nickel alloy layer, this indium nickel alloy layer by this indium layer of alloying and this nickel dam to comprise In 7Ni 3And form.

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