Iii-v nitride substrate wafer and its manufacture method and uses

Iii-v nitride substrate wafer and its manufacture method and uses

  • CN 101,307,498 A
  • Filed: 03/12/2001
  • Published: 11/19/2008
  • Est. Priority Date: 03/13/2000
  • Status: Active Grant
First Claim
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1. one kind comprises Ga and In (Al, Ga, In) N crystal block one of at least, comprise homogeneity seed crystal material and the crystal block material of growing thereon, between described seed crystal material and crystal block material an internal layer is arranged, wherein, crystal block has extreme greater than the seed crystal material transverse section.

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