Method of manufacturing cmos devices by implantation of N- and P-type cluster ions

Method of manufacturing cmos devices by implantation of N- and P-type cluster ions

  • CN 101,308,822 B
  • Filed: 06/06/2003
  • Issued: 12/25/2013
  • Est. Priority Date: 06/26/2002
  • Status: Active Grant
First Claim
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1. one kind dopant material is implanted to the method in a substrate, the method comprises the steps:

  • Produce As nh x+the N-type cluster ion of form, wherein n and x are integer, and n=2,3 or the scope of 4, x in 0≤

    x≤

    n+2 in;

    Produce P-type cluster ion from one second molecular substance;

    Described N-type cluster ion is implanted in the first area on a substrate;

    AndDescribed P-type cluster ion is implanted in the second area on described substrate.

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