Multi-layer high quality gate dielectric for low-temperature poly-silicon tfts

Multi-layer high quality gate dielectric for low-temperature poly-silicon tfts

  • CN 101,310,036 A
  • Filed: 11/15/2005
  • Published: 11/19/2008
  • Est. Priority Date: 11/16/2004
  • Status: Active Grant
First Claim
Patent Images

1. reaction chamber that is used for the plasma treatment substrate comprises:

  • One or more reaction chamber wall, it defines the plasma treatment zone;

    Substrate support is placed in this plasma treatment zone and in order to support this substrate on the plasma treatment position of a plurality of vertical separations;

    The RF emitting module, installing is to transmit the RF energy to this plasma treatment zone;

    The RF power source is connected to this RF emitting module;

    AndThe oxic gas body source is with this plasma treatment regional connectivity.

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