Semiconductor device

Semiconductor device

  • CN 101,320,723 B
  • Filed: 09/08/2005
  • Issued: 02/06/2013
  • Est. Priority Date: 09/10/2004
  • Status: Active Grant
First Claim
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1. semiconductor device comprises:

  • Semiconductor layer has the zone that is formed with nonvolatile memory;

    The first interlayer insulating film, formation on the described zone of described semiconductor layer;

    The first wiring layer, be formed at described the first interlayer insulating film above;

    The second interlayer insulating film, be formed at described the first wiring layer above;

    The second wiring layer is electrically connected with described the first wiring layer, be formed at described the second interlayer insulating film above;

    The 3rd interlayer insulating film, be formed at described the second wiring layer above;

    A plurality of the first light shield layers, be positioned at described the 3rd interlayer insulating film above, and be formed at described zone above;

    The 4th interlayer insulating film, be formed at described the first light shield layer above;

    AndA plurality of the second light shield layers, be formed at described the 4th interlayer insulating film above,Wherein, a plurality of described the second light shield layers are positioned at a plurality of described the first light shield layers each other, and are arranged to described the first light shield layer partly overlapping.

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