HEMT device and manufacturing method thereof

HEMT device and manufacturing method thereof

  • CN 101,320,750 A
  • Filed: 06/05/2008
  • Published: 12/10/2008
  • Est. Priority Date: 06/06/2007
  • Status: Active Application
First Claim
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1. HEMT device comprises:

  • Semiconductor layer on substrate;

    Separator on above-mentioned semiconductor layer;

    The source electrode and the drain electrode that contact with above-mentioned semiconductor layer;

    First dielectric layer on the zone between above-mentioned source electrode on the above-mentioned separator and the drain electrode;

    AndGrid on above-mentioned first dielectric layer;

    Wherein, above-mentioned grid is a double-decker, and it is conductive layer at the middle and upper levels, and lower floor is second dielectric layer.

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