Technique for reducing crystal defects in strained transistors by tilted preamorphization

Technique for reducing crystal defects in strained transistors by tilted preamorphization

  • CN 101,322,228 A
  • Filed: 11/15/2006
  • Published: 12/10/2008
  • Est. Priority Date: 11/30/2005
  • Status: Active Application
First Claim
Patent Images

1. , a kind of method comprises:

  • By the tilting injection technology (208,308P, 308N), in primary crystallization semiconductor layer (203,303), formation is adjacent to and is formed at this semiconductor layer (203,303) Shang Fang gate electrode (204,304) and the non-crystallization region in fact (212,312) that below this gate electrode, extends;

    Formation is subjected to the layer (209,309) of stress, its have the intrinsic stress of appointment in the top of the part of this semiconductor layer (203,303) at least in case with stress transfer in this semiconductor layer (203,303);

    AndUnder the situation that this layer (209,309) that is subjected to stress is arranged,, make this non-crystallization region (212,312) crystallization more in fact by heat-treating (223).

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