A technique for increasing adhesion of metallization layers by providing dummy vias

A technique for increasing adhesion of metallization layers by providing dummy vias

  • CN 101,322,238 A
  • Filed: 11/15/2006
  • Published: 12/10/2008
  • Est. Priority Date: 11/30/2005
  • Status: Active Application
First Claim
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1. , a kind of method comprises the following steps:

  • (the 205L of first at first dielectric layer (205,305) of semiconductor device (200,300), form a plurality of through holes (213,313), wherein said a plurality of through holes (213 305L),

         313) at least some in be electrically no function through hole (213B, 313B);

    AndAt described first dielectric layer (205,305) second portion (205U, form first metal area (212 305U),

         312), (205U 305U) is positioned on the described first (205L) described second portion, described first metal area (212,312) (213B, 313B) one of them is individual to be connected to described electrical no function through hole.

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