Semiconductor device and manufacture method thereof

Semiconductor device and manufacture method thereof

  • CN 101,322,241 A
  • Filed: 11/29/2005
  • Published: 12/10/2008
  • Est. Priority Date: 11/29/2005
  • Status: Active Application
First Claim
Patent Images

1. semiconductor device is characterized in that having:

  • Semiconductor substrate,Semiconductor element, it is formed on the described Semiconductor substrate,Dielectric film, it covers described semiconductor element, and is formed on the top of described Semiconductor substrate,Bottom insulating properties hydrogen nonproliferation film, it is formed on the top of described dielectric film, and has the ability that stops hydrogen, moisture,Conduction is close to film, and it is formed on the top of described insulating properties hydrogen nonproliferation film,Ferroelectric condenser, it has lower electrode, ferroelectric film and upper electrode, wherein, described lower electrode is formed on described conduction and is close to the film top, described ferroelectric film is formed on the described lower electrode, and when overlooking observation, being positioned at described lower electrode, described upper electrode is formed on the described ferroelectric film, and is positioned at described ferroelectric film when overlooking observation;

    And,Described conduction is close to film and is had being close to characteristic and reducing the function of the leakage current of described ferroelectric condenser of the lower electrode that improves described ferroelectric condenser.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×