Semiconductor subassemblies with interconnects and methods for manufacturing the same

Semiconductor subassemblies with interconnects and methods for manufacturing the same

  • CN 101,330,079 A
  • Filed: 06/06/2008
  • Published: 12/24/2008
  • Est. Priority Date: 06/06/2007
  • Status: Active Application
First Claim
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1. semiconductor sublayer assembly that in high power, AC motor application, is used for the handover module of inverter circuit, described semiconductor sublayer assembly comprises:

  • Wafer, it has the opposed first metallization face and the second metallization face;

    Semiconductor switch device, it is electrically coupled to the described first metallization face of described wafer, and has at least one electrode zone;

    AndInterconnection device, it is engaged to described semiconductor switch device, and comprises;

    The first metal layer, it is engaged to described at least one electrode zone of described semiconductor switch device;

    Ceramic layer, it is engaged to described the first metal layer, and described ceramic layer defines the path that inserts described the first metal layer;

    Second metal level, it is engaged to described ceramic layer;

    AndConductive materials, its described path that is arranged on described ceramic layer is interior described the first metal layer is electrically coupled to described second metal level, so that described second metal level is formed for the contact mat of described at least one electrode zone of described semiconductor switch device.

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