Method of fabrication of a finfet element

Method of fabrication of a finfet element

  • CN 101,359,622 A
  • Filed: 10/26/2007
  • Published: 02/04/2009
  • Est. Priority Date: 07/31/2007
  • Status: Active Application
First Claim
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1. the manufacture method of a fin formula field effect transistor device comprises the following steps:

  • Substrate is provided, and it comprises first fin and second fin;

    Form first material layer on this first fin, wherein this first material layer comprises the impurity of first kind;

    The impurity that second kind is provided is on this second fin;

    AndHigh-temperature technology is carried out in this substrate, and this substrate comprises the impurity of this first material layer and this second kind.

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