Self-rotary transferring device and preparation thereof

Self-rotary transferring device and preparation thereof

  • CN 101,359,715 A
  • Filed: 09/26/2008
  • Published: 02/04/2009
  • Est. Priority Date: 09/26/2008
  • Status: Active Grant
First Claim
Patent Images

1. the structure of a self-rotary transferring device is characterized in that adopting the metal multi-layered film structure that is formed by stacking successively by first ferromagnetic material, non-magnetic material, second ferromagnetic material, and described self-rotary transferring device contains upward to top layer successively from bottom:

  • Ground floor is a bottom electrode layer, is the metal platinum of 150 nanometers~

    250 nanometer thickness;

    The second layer is a Seed Layer, is the metal tantalum of 3 nanometers~

    5 nanometer thickness;

    The 3rd layer is pinning layer, is the iridium manganese alloy of 10 nanometers~

    15 nanometer thickness;

    The 4th layer is nailed layer, is the ferromagnetic ferro-cobalt of 4 nanometers~

    10 nanometer thickness, and magnetic moment is fixed;

    Layer 5 is a separator, is the metallic copper of 4 nanometers~

    6 nanometer thickness;

    Layer 6 is first free layer, is the ferro-cobalt of 1 nanometer~

    1.5 nanometer thickness;

    Layer 7 is second free layer, is the dilval of 3 nanometers~

    5 nanometer thickness;

    The 8th layer is top electrode layer, is the metal platinum of 150 nanometers~

    250 nanometer thickness;

    Wherein first free layer and second free layer are formed compound free layer, and magnetic moment can freely overturn.

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