Semi-conductor light emitter and manufacturing method thereof

Semi-conductor light emitter and manufacturing method thereof

  • CN 101,364,628 A
  • Filed: 08/06/2007
  • Published: 02/11/2009
  • Est. Priority Date: 08/06/2007
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor light-emitting apparatus comprises:

  • Sapphire substrate has male part, and the part of at least one outer surface of this male part comprises crystal face, non-polar plane or semi-polarity face;

    AndThe semiconductor light emitting layered structure is formed at this substrate top, and meets with the profile phase of this male part substantially.

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