Method and system for inspecting indirect bandgap semiconductor structure

Method and system for inspecting indirect bandgap semiconductor structure

  • CN 101,365,937 B
  • Filed: 10/11/2006
  • Issued: 01/14/2015
  • Est. Priority Date: 10/11/2005
  • Status: Active Grant
First Claim
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1. determine a method for the local material parameter of indirect bandgap material, said method comprising the steps of:

  • Utilize light source to irradiate described semiconductor material from side, the described light source producing light is suitable for causing photoluminescence in described indirect bandgap material;

    Utilize image capture device catch from irradiated the same side or from opposite side described in be radiated at the image of the photoluminescence caused in the large area of described semiconductor material;

    AndTo the image applications image processing techniques of caught photoluminescence, to utilize the spatial variations of the described photoluminescence caused in described large area to determine the described local material parameter of described semiconductor material, wherein said method is used for checking silicon wafer with the speed of a wafer approximately per second.

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