Phosphor converted light emitting device

Phosphor converted light emitting device

  • CN 101,370,906 A
  • Filed: 01/15/2007
  • Published: 02/18/2009
  • Est. Priority Date: 01/16/2006
  • Status: Active Application
First Claim
Patent Images

1. device comprises:

  • Semiconductor structure, this semiconductor structure comprise the luminescent layer that is placed between n type zone and the p type zone, and this luminescent layer is configured to launch the light with first peak wavelength;

    First phosphorescent substance, this first phosphorescent substance are placed on the path of light of described luminescent layer emission, and this first phosphor configuration becomes emission to have the light of second peak wavelength;

    AndSecond phosphorescent substance, this second phosphorescent substance are placed on the path of light of described luminescent layer emission, and this second phosphor configuration becomes emission to have the light of the 3rd peak wavelength, wherein;

    Described second phosphorescent substance comprises Eu 3+And Under 298K and 1.013bar in the excitation spectrum of second phosphorescent substance, the maximum strength in the wavelength region between 460nm and the 470nm be at least in the wavelength region between 220nm and the 320nm maximum strength 5%.

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