Patterning method and field effect transistors

Patterning method and field effect transistors

  • CN 101,373,790 A
  • Filed: 09/28/2004
  • Published: 02/25/2009
  • Est. Priority Date: 10/15/2003
  • Status: Active Application
First Claim
Patent Images

1. a field-effect transistor (100),Have two raceway groove bonding pads (104,106),Have the controlled area (52,62) that comprises at least two controlled area parts,Have active area, this active area forms the projection (56) of single crystalline substrate (10c), and is arranged between the raceway groove bonding pad (104,106) on the one hand, be arranged on the other hand between two controlled area parts,And have electric insulation and be arranged in the controlled area part and active area (56) between insulation layer (50,60),Projection (56) is isolated by the insulating material (82) of electric insulation at its base portion with substrate (10c),And the projection (56) that insulating material (82) laterally ends in the single crystalline substrate (10c) is located.

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