Pulsed laser bonding method for stacking electric elements based on silicon throughhole

Pulsed laser bonding method for stacking electric elements based on silicon throughhole

  • CN 101,379,892 B
  • Filed: 09/08/2008
  • Issued: 09/24/2014
  • Est. Priority Date: 03/27/2008
  • Status: Active Grant
First Claim
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1. the stacking pulsed laser bonding method of the semiconductor element based on silicon through hole, to form an interconnection between two stacking semiconductor elements, comprising:

  • (a) on each described element, form a silicon through hole, its opening by the upper surface at described element (40) and have to described opening be the inner surface of diffusion type throughhole portions (50) form, the radial dimension of described opening (40) is greater than the aperture of described throughhole portions (50);

    (b) by a kind of sputtering method, adhesion layer is fabricated in through-hole surfaces, and use plasma enhanced chemical vapor deposition technology (PECVD) deposition skim SiO2 to surface, then use a kind ofly without mask etch, the apical tier of described thin layer SiO2 to be etched away, only leave on through-hole side wall remaining described thin layer SiO2 to be conducive to filling from top to bottom full metal in through hole;

    (c) in each described silicon through hole, fill one by the first metal metal bolt;

    (d) described in stacking first, element, on element described in second, makes described silicon through hole alignment, has the second metal between described metal bolt;

    With(e) apply laser energy pulse on the silicon through hole of described element, to form a junction being bonded between described the second metal and described metal bolt.

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