System and method for sputtering a tensile silicon nitride film

System and method for sputtering a tensile silicon nitride film

  • CN 101,395,294 A
  • Filed: 03/07/2007
  • Published: 03/25/2009
  • Est. Priority Date: 03/07/2006
  • Status: Active Application
First Claim
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1. method, it comprises:

  • Nitrogen is introduced in the treatment chamber, and wherein said treatment chamber comprises the target that comprises silicon;

    Described treatment chamber is put into zone of transition between metal area and the poisoned region;

    AndApply voltage to described target.

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