Method of improving oxide growth rate of selective oxidation processes

Method of improving oxide growth rate of selective oxidation processes

  • CN 101,404,253 A
  • Filed: 09/24/2008
  • Published: 04/08/2009
  • Est. Priority Date: 09/24/2007
  • Status: Active Application
First Claim
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1. the method for the material of the synthetic substrate of a selective oxidation comprises:

  • Should synthesize substrate is arranged in the process chamber;

    Admixture of gas is incorporated into this process chamber, and this admixture of gas comprises that oxygen-containing gas and percent by volume are greater than 65% hydrogen-containing gas;

    This process chamber is pressurized to 250 holders to the pressure between 800 holders;

    AndWith preset time this process chamber is heated to predetermined temperature, so that hydrogen-containing gas and oxygen-containing gas be at this process chamber internal reaction, and selective oxidation should synthetic substrate.

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