Method for treating an oxygen-containing semiconductor wafer, and semiconductor component

Method for treating an oxygen-containing semiconductor wafer, and semiconductor component

  • CN 101,405,847 A
  • Filed: 01/19/2007
  • Published: 04/08/2009
  • Est. Priority Date: 01/20/2006
  • Status: Active Grant
First Claim
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1. method that is used to handle oxygen-containing semiconductor wafer (100), wherein said oxygen-containing semiconductor wafer (100) have first (101), second (102) relative with first (101), with first semiconductor regions (103 '"'"') of first (101) adjacency and with second semiconductor regions (104 '"'"') of second (102) adjacency, comprise following method step:

  • With second (102) of high energy particle irradiation wafer (100), therefore in second semiconductor regions (104 '"'"'), produce crystal defect,Carry out first heat treatment, wherein wafer (100) is heated to the temperature between 700 ℃

    to 1100 ℃

    .

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