Method for manufacturing epitaxial wafer

Method for manufacturing epitaxial wafer

  • CN 101,415,866 A
  • Filed: 01/24/2007
  • Published: 04/22/2009
  • Est. Priority Date: 01/31/2006
  • Status: Active Application
First Claim
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1. the manufacture method of epitaxial wafer is characterized in that, comprising:

  • According to the use of wafer surface shape control, with the smoothing operation of the described wafer surface of this smoothing to the etching solution of described wafer surface;

    WithThe epitaxial film that forms the epitaxial film of silicon single crystal formation by epitaxy on described wafer surface forms operation.

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