Integrated capacitive and inductive power sources for a plasma etching chamber

Integrated capacitive and inductive power sources for a plasma etching chamber

  • CN 101,426,949 B
  • Filed: 02/16/2007
  • Issued: 05/27/2015
  • Est. Priority Date: 02/27/2006
  • Status: Active Grant
First Claim
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1. be configured to produce an isoionic plasma processing chamber, it comprises:

  • Bottom electrode assembly, it has lower electrode and the conducting ring around this lower electrode, and wherein this conducting ring is isolated by dielectric collar with this lower electrode, and this lower electrode is configured to hold substrate;

    AndTop electrode assembly, it has top electrode and the ruhmkorff coil around this top electrode periphery, wherein this ruhmkorff coil to be embedded in dielectric materials and to be configured to pass conducting ring being defined in gas transition in the region in this treatment chamber is plasma, this region is between ruhmkorff coil and conducting ring, and be positioned at the region exterior be limited on this lower electrode upper surface, wherein conducting ring in the face of ruhmkorff coil surface not cover by dielectric materials.

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