Integrated MIS photosensitive device using continuous films

Integrated MIS photosensitive device using continuous films

  • CN 101,427,387 A
  • Filed: 06/23/2005
  • Published: 05/06/2009
  • Est. Priority Date: 07/01/2004
  • Status: Active Application
First Claim
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1. device that comprises integrated light-sensitive device comprises:

  • Substrate;

    WithMetal-insulator semiconductor (MIS) photodiode, its at least a portion are positioned at described substrate top, and comprise;

    First and second electrodes,One or more dielectrics, at least a portion that wherein has at least are between described first and second electrodes, and at least one of wherein said one or more dielectric portion comprises the continuous basically separately layer of dielectric substance,One or more semiconductors, between one of them of one of them and described first and second electrodes of its at least one at least a portion in described one or more dielectrics, at least one of wherein said one or more semiconductor portions comprise semi-conducting material continuous basically separately layer andThird electrode, it meets the boundary with one of them of described first and second electrodes basically.

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