The manufacture method of gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp

The manufacture method of gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp

  • CN 101,427,390 B
  • Filed: 04/23/2007
  • Issued: 02/03/2016
  • Est. Priority Date: 04/24/2006
  • Status: Active Grant
First Claim
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1. a gallium nitride compound semiconductor light-emitting device, it is the gallium nitride compound semiconductor light-emitting device of the transparent conductive oxide-film be laminated with in the p-type semiconductor layer of gallium nitride compound semiconductor element containing alloy, it is characterized in that, the laser annealing process of annealing in process is carried out to this transparent conductive oxide-film by adopting pulse laser and at the temperature of the scope of 200 ~ 300 DEG C, carries out the thermal annealing processes of thermal anneal process, form the concentration of element in described transparent conductive oxide-film of described p-type semiconductor layer, scope within the interface 2nm apart from described transparent conductive oxide-film and p-type semiconductor layer is 20 below atom %.

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