Memory system with switch element

Memory system with switch element

  • CN 101,449,370 A
  • Filed: 05/21/2007
  • Published: 06/03/2009
  • Est. Priority Date: 05/22/2006
  • Status: Active Application
First Claim
Patent Images

1. , a kind of memory system (1200) comprising:

  • Formation has the switch module (104) on first limit (114) and second limit (116);

    Formation has the cell transistor (106) of gate terminal (108);

    Form internal storage location (102), this internal storage location (102) has switch module (104) and cell transistor (106), and this gate terminal (108) is connected to this second limit (116);

    Locate concatenation character line (118) and this internal storage location (102) on this first limit (114);

    Connect bit line (126) and this internal storage location (102);

    AndConnect reference source (124) and this internal storage location (102).

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