Memory cell array with low resistance common source and high current drivability

Memory cell array with low resistance common source and high current drivability

  • CN 101,449,379 A
  • Filed: 04/05/2007
  • Published: 06/03/2009
  • Est. Priority Date: 04/27/2006
  • Status: Active Application
First Claim
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1. , a kind of semiconductor device comprises:

  • Substrate (302);

    Plurality of source regions territory in this substrate (302);

    AndThe long and narrow conductor (378) that connects this plurality of source regions territory, this long and narrow conductor (378) is positioned adjacent to this substrate (302) along its length, thereby forms common source with this plurality of source regions territory.

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