Gaas single crystal substrate and epitaxial wafer using the same

Gaas single crystal substrate and epitaxial wafer using the same

  • CN 101,451,265 B
  • Filed: 08/18/1999
  • Issued: 03/27/2013
  • Est. Priority Date: 09/28/1998
  • Status: Active Grant
First Claim
Patent Images

1. GaAs single crystalline substrate has:

  • Be 2 * 10 to the maximum 4Cm -2The plane average dislocation density, 15.0-20.0 * 10 15Cm -3Carbon concentration and 2.0-20.0 * 10 16Cm -3Boron concentration, perhaps, 2.5-20.0 * 10 15Cm -3Carbon concentration and 14.0-20.0 * 10 16Cm -3Boron concentration, Mostly be most 1 * 10 17Cm -3De-carbon and the outer impurity concentration of boron, 5.0-10.0 * 10 15Cm -3EL2 concentration, 1.0-5.0 * 10 8The resistivity of Ω

    cm, and Be 1.0 * 10 to the maximum -5The average residual strain that records of photoelastic analysis.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×