Resistive memory and method for manufacturing the same

Resistive memory and method for manufacturing the same

  • CN 101,452,943 A
  • Filed: 02/20/2008
  • Published: 06/10/2009
  • Est. Priority Date: 12/05/2007
  • Status: Active Application
First Claim
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1. resistance-type memory comprises:

  • Substrate;

    First holding wire is arranged on this substrate, and this first holding wire has first surface;

    Memory cell has second surface, and this memory cell contacts this first surface by this second surface and this first holding wire couples;

    AndThe secondary signal line is arranged on this memory cell and couples this memory cell, and wherein the area of this second surface is in fact more than or equal to the area in this first holding wire and this secondary signal line overlap zone.

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