Photoelectric semiconductor device

Photoelectric semiconductor device

  • CN 101,471,388 A
  • Filed: 12/28/2007
  • Published: 07/01/2009
  • Est. Priority Date: 12/28/2007
  • Status: Active Application
First Claim
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1. opto-semiconductor device comprises:

  • The semiconductor system can carry out the conversion between luminous energy and electric energy;

    One boundary layer is formed at least two surfaces of this semiconductor system;

    One electric conductor carries this semiconductor system;

    AndOne electrical contact passes this boundary layer, and is electrically connected this semiconductor system and this electric conductor.

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