Rate-enhanced CMP compositions for dielectric films

Rate-enhanced CMP compositions for dielectric films

  • CN 101,490,203 A
  • Filed: 07/12/2007
  • Published: 07/22/2009
  • Est. Priority Date: 07/24/2006
  • Status: Active Application
First Claim
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1. chemical-mechanical polishing compositions, it is made up of following material basically:

  • (a) silicon-dioxide, it has the average primary particle diameter of 10nm to 40nm;

    (b) oxygenant, it is selected from hydrogen peroxide, perhydrit, percarbonate, benzoyl peroxide, peracetic acid, sodium peroxide, ditertiary butyl peroxide, single persulphate, two persulphates, nitrate, iron (III) compound and combination thereof;

    (c) quaternary ammonium compound, it comprises and has structure R 1R 2R 3R 4N +Positively charged ion, R wherein 1, R 2, R 3And R 4Be independently selected from C 2-C 6Alkyl and C 7-C 12Aralkyl;

    And (d) water,Wherein this polishing composition has 1 to 5 pH value.

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